发明名称 POWER SEMICONDUCTOR MODULE
摘要 PROBLEM TO BE SOLVED: To provide a power semiconductor module which improves the reliability of soldering between a metal heat radiation plate and a conductor pattern of an insulation substrate and between the conductor pattern of the insulation substrate and a lower end of an external lead-out terminal.SOLUTION: A power semiconductor module 100 is manufactured by: providing on an insulation substrate 2 a conductor pattern 2b1 electrically connected with a lower surface electrode of a power semiconductor chip 3a, a conductor pattern 2b2 electrically connected with an upper surface electrode of the same, and a lower surface side conductor pattern 2c; and fixing a metal heat radiation plate 1 to a basing jig so that a lower surface of the heat radiation plate 1 is deformed in a convex shape while following a concave upper surface of the jig at execution of soldering between the heat radiation plate 1 and the conductor pattern 2c and between the conductor patterns 2b1 and 2b2 and lower ends 6a4 and 6b4 of external lead-out terminals 6a and 6b. In the power semiconductor module 100, a Pb-free solder 10a containing Sb is used for the soldering between the heat radiation plate 1 and the conductor pattern 2c, and a Pb-free solder 10f1 and 10f2 not containing Sb is used for the soldering between the conductor patterns 2b1 and 2b2 and the lower ends 6b4 and 6a4 of the external lead-out terminals 6b and 6a.
申请公布号 JP2015103540(A) 申请公布日期 2015.06.04
申请号 JP20130240629 申请日期 2013.11.21
申请人 NIPPON INTER ELECTRONICS CORP 发明人 BABA HIDEAKI;TOJIMA TAKASHI
分类号 H01L25/07;H01L23/373;H01L23/40;H01L25/18 主分类号 H01L25/07
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