SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a transistor region and diode region. A plurality of transistors is in the transistor region and at least one diode is in the diode region. The transistors include first and second body regions of a first conductivity type. The dopant concentration in the second body region is greater than the dopant concentration in the first body region. The diode includes first and second anode regions of the first conductivity type. The dopant concentration in the second anode region is greater than the dopant concentration in the first anode region. A total dopant amount in the second body region within a first block portion of the semiconductor substrate is greater than a total dopant amount in the second anode layer within a second block portion of the semiconductor substrate of the same size as the first block portion.

主权项

1. A semiconductor device, comprising:
a first electrode disposed on a first surface of a semiconductor substrate; a second electrode disposed on a second surface of the semiconductor substrate, the second surface opposite the first surface; and a first semiconductor region having a first conductivity type and disposed between the first and second electrodes, wherein a first element region of the semiconductor substrate includes:
a collector region of a second conductivity type disposed between the first semiconductor region and the first electrode;a first body region of the second conductivity type disposed between the first semiconductor region and the second electrode;a second body region of the second conductivity type disposed between the first body region and the second electrode and contacting the second electrode, a concentration of second conductivity type dopant in the second body region being greater than a concentration of second conductivity type dopant in the first body region;an emitter region of the first conductivity type disposed between the first body region and the second electrode and contacting the second electrode; anda first plurality of gate electrodes between the first and second electrodes and spaced from each other in a first direction parallel to the first surface, each gate electrode in the first plurality being adjacent to the first semiconductor region, the first body region, and the emitter region via a gate insulating film; and a second element region of the semiconductor substrate includes:
a cathode region of the first conductivity type disposed between the first semiconductor region and the first electrode;a first anode region of the second conductivity type disposed between the first semiconductor region and the second electrode; anda second anode region of the second conductivity type disposed between the first anode region and the second electrode and contacting the second electrode, a concentration of second conductivity type dopant in the second anode region being greater than a concentration of second conductivity type dopant in the first anode region; and a total second conductivity type dopant amount of the second body region in the first element region and within a first block portion of the semiconductor substrate is greater than a total second conductivity type dopant amount of the second anode layer in the second element region within a second block portion of the semiconductor substrate, the first block portion having a width in the first direction that is equal to a spacing between adjacent gate electrodes in the first plurality of gate electrodes and a length of a predetermined distance in a second direction, parallel to the first surface and perpendicular to the first direction, the second block portion having a width and a length that is the same as the first block portion.