发明名称 ELEMENT AND FORMATION METHOD OF FILM
摘要 A novel element is provided. A novel film formation method is provided. A novel element manufacturing method is provided. Furthermore, a film including graphene is formed at low cost and high yield. The element includes a first electrode and a second electrode located apart from the first electrode. The first electrode and the second electrode include graphene. The film including graphene is formed through a first step of forming a film including graphene oxide over a substrate, a second step of immersing the film including graphene oxide in an acidic solution, and a third step of reducing graphene oxide included in the film including graphene oxide. Furthermore, before graphene oxide included in the film including graphene oxide is reduced, the film including graphene oxide is selectively removed by a photolithography technique.
申请公布号 US2015155077(A1) 申请公布日期 2015.06.04
申请号 US201414548814 申请日期 2014.11.20
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI Shunpei;OGUNI Teppei;OGINO Kiyofumi;IKEDA Hisao
分类号 H01B13/00;H01B1/04;H05K1/11;H05K1/02;H05K1/09 主分类号 H01B13/00
代理机构 代理人
主权项 1. An element comprising: a first electrode over an insulating film; a second electrode over the insulating film; a first conductive film electrically connected to the first electrode; and a second conductive film electrically connected to the second electrode, wherein the second electrode is located apart from the first electrode, and wherein each of the first electrode and the second electrode includes graphene.
地址 Atsugi-shi JP
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