| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin-film transistor using an oxide semiconductor film, the transistor which has stable electrical characteristics and excellent reliability. <P>SOLUTION: A semiconductor device having stable electrical characteristics can be manufactured by adjusting an off-current value per 1μm of a channel width to 1×10<SP POS="POST">-12</SP>A or less within the temperature limits of -25°C and 150°C for a channel length, which is within the limits of 1.5μm and 100μm, or preferably within the limits of 3μm and 10μm, of a thin-film transistor using an oxide semiconductor film. Power consumption due to variation of an off-current can be reduced particularly in a display device as one embodiment of a semiconductor device. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
