A method for formation of a graded band gap p-n homojunction in cadmium telluride

摘要

The invention relates to technical physics and can be used in the production of light-absorbing and light-emitting semiconductor devices. The technical problem to be solved by the present invention is to simplify a method for formation of a shallow graded band gap p-n homojunction in cadmium telluride. In a method for formation of a graded band gap p-n homojunction in cadmium telluride, according to the present invention, the surface of the p-type electrical conductivity cadmium telluride single crystal is coated with a layer of silicon dioxide with thickness no more than 100 nm and then the surface of the p-type electrical conductivity cadmium telluride single crystal is irradiated by laser radiation with an absorption coefficient in cadmium telluride no less than 5.9·10 5 cm -1 , the laser radiation doses being in the range from 1 to 15 mJ/cm 2 , and the pulse duration being in the interval from 1 to 10 ns, to form the graded band gap p-n homojunction with the thickness of the n-type layer equal to or less than 17 nm on the surface layer of the cadmium telluride single crystal.