| 摘要 |
<p>The present invention is directed to a method for cleaning a semiconductor wafer which comprises filling a cleaning solution containing ammonia and aqueous hydrogen peroxide in a cleaning tank comprising a synthetic quartz material with an average Al concentration of 1 ppb or less, immersing the above-mentioned semiconductor wafer in the above-mentioned cleaning solution, and cleaning the above-mentioned semiconductor wafer so that a surface etching rate of the above-mentioned synthetic quartz by the above-mentioned cleaning solution becomes 0.3 nm/min or less, and according to this method, a cleaning method which can maintain the Al concentration in the ammonia and per-water cleaning solution to a low concentration and can improve surface cleanliness of the semiconductor wafer is provided.</p> |
