| 摘要 |
Provided is a method for cleaning a metal gate semiconductor, by which a resist adhering to a semiconductor can be effectively stripped while etching of metal gates is suppressed. The method includes an ashing step (step s1) of ashing a photoresist on a semiconductor; and a persulfuric acid cleaning step (step s2) of bringing, after the ashing step, the semiconductor that has been subjected to the ashing step into contact with a sulfuric acid solution containing persulfuric acid , and thereby stripping the photoresist on the semiconductor from the semiconductor, while the sulfuric acid solution containing persulfuric acid used in the persulfuric acid cleaning step has a hydrogen peroxide concentration of 16 mM as O or less, a sulfuric acid concentration of from 90% by mass to 96% by mass, a liquid temperature of from 70°C to 130°C, and a persulfuric acid concentration of from 0.50 mM as O to 25 mM as O. |
