<p>The present invention provides a method for forming an oxide semiconductor. The method for forming an oxide semiconductor comprises: a step of mixing a compound including metal atoms and a solvent to manufacture a mixed solution; a step of immersing a substrate in the mixed solution; and a step of radiating ultrasonic waves to the mixed solution to form an oxide semiconductor on the substrate.</p>
申请公布号
KR20150060328(A)
申请公布日期
2015.06.03
申请号
KR20130144632
申请日期
2013.11.26
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人
OH, HIM CHAN;HWANG, CHI SUN;YANG, JONG HEON;CHU, HYE YONG