| 发明名称 | Tunable light-emitting diode | ||
| 摘要 | A light-emitting diode device includes a base substrate including a plurality of quantum well layers, a first electrode on one side of the plurality of quantum well layers, and a second electrode on an opposite side of the plurality of quantum well layers. The device includes a tensile-stressing layer formed on the base substrate and having a thickness and chemical composition configured to generate a first tensile stress in the base substrate, the first compressive stress selected to cause the base substrate to have a predetermined band-gap. | ||
| 申请公布号 | US9048365(B2) | 申请公布日期 | 2015.06.02 |
| 申请号 | US201314058944 | 申请日期 | 2013.10.21 |
| 申请人 | International Business Machines Corporation | 发明人 | Bedell Stephen W.;Hekmatshoartabari Bahman;Sadana Devendra K.;Shahrjerdi Davood |
| 分类号 | H01L29/06;H01L31/00;H01L33/06;H01L33/32 | 主分类号 | H01L29/06 |
| 代理机构 | Cantor Colburn LLP | 代理人 | Cantor Colburn LLP ;Percello Louis |
| 主权项 | 1. A light-emitting diode device, comprising: a base substrate including a plurality of quantum well layers, a first electrode on one side of the plurality of quantum well layers, and a second electrode on an opposite side of the plurality of quantum well layers; and a tensile-stressing layer formed on the base substrate and having a thickness and chemical composition configured to generate a first tensile stress in the base substrate, the first compressive stress selected to cause the base substrate to have a predetermined band-gap, wherein the tensile-stressing layer is a stress-inducing layer having a thickness and chemical composition configured to define a location of a fracture in a host substrate on which the base substrate is formed, the fracture formed in a spalling process. | ||
| 地址 | Armonk NY US | ||