发明名称 FORMATION OF ETCH-RESISTANT RESISTS THROUGH PREFERENTIAL PERMEATION
摘要 <p>A method is provided for creation of oxygen etch-resistant polymeric films for use in the production of micron and submicron dimension patterns and fine lines. These etch-resistant polymeric films find use in fabrication of complex structures such as those in electronic devices and magnetic thin film heads. The etch resistance is achieved by incorporation of a protective-oxide forming metal into a polymeric material using preferential permeation of organometallic materials into the polymeric material.</p>
申请公布号 CA1251680(A) 申请公布日期 1989.03.28
申请号 CA19850495659 申请日期 1985.11.19
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CHIONG, KAOLIN N.;YANG, BEA-JANE L.;YANG, JER-MING
分类号 H01L21/302;G03F7/26;H01L21/3065;(IPC1-7):G03F7/26 主分类号 H01L21/302
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