发明名称 |
FORMATION OF ETCH-RESISTANT RESISTS THROUGH PREFERENTIAL PERMEATION |
摘要 |
<p>A method is provided for creation of oxygen etch-resistant polymeric films for use in the production of micron and submicron dimension patterns and fine lines. These etch-resistant polymeric films find use in fabrication of complex structures such as those in electronic devices and magnetic thin film heads. The etch resistance is achieved by incorporation of a protective-oxide forming metal into a polymeric material using preferential permeation of organometallic materials into the polymeric material.</p> |
申请公布号 |
CA1251680(A) |
申请公布日期 |
1989.03.28 |
申请号 |
CA19850495659 |
申请日期 |
1985.11.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHIONG, KAOLIN N.;YANG, BEA-JANE L.;YANG, JER-MING |
分类号 |
H01L21/302;G03F7/26;H01L21/3065;(IPC1-7):G03F7/26 |
主分类号 |
H01L21/302 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|