Semiconductor light emitting device and method of manufacturing the same

摘要

A method of manufacturing a semiconductor light emitting device, includes forming a light emitting structure on a growth substrate. The light emitting structure includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. A support substrate having one or more protrusions formed on one surface thereof is prepared. The one or more protrusions formed on the one surface of the support substrate are attached to one surface of the light emitting structure. The growth substrate is separated from the light emitting structure.

主权项

1. A method of manufacturing a semiconductor light emitting device, the method comprising steps of:
forming a light emitting structure on a growth substrate, such that the light emitting structure includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; preparing a support substrate having one or more protrusions formed on one surface thereof; attaching the one or more protrusions formed on the one surface of the support substrate to one surface of the light emitting structure; separating the growth substrate from the light emitting structure; separating a portion of the support substrate from the light emitting structure during or after the step of attaching the one or more protrusions to the one surface of the light emitting structure; and forming a temporary substrate to be attached to the support substrate after the separating of the portion of the support substrate from the light emitting structure, wherein a space between the one or more protrusions is formed inside the support substrate.