Semiconductor device and method of manufacturing semiconductor device

摘要

In a semiconductor device, a first-layer includes a group-III nitride semiconductor of a first conduction type. A second-layer includes a group-III nitride semiconductor of a second conduction type on a first surface of the first layer. A third-layer includes an Al-containing group-III nitride semiconductor on a first region of a surface of the second layer. A gate electrode has one end above a surface of the third-layer and has the other end within the first-layer via the second-layer. The gate electrode is insulated from the first- to third-layers. A first electrode is connected to the third-layer. A second electrode is connected to a second region of the surface of the second-layer. A third electrode is provided above a second surface of the first layer. The second surface is opposite to the first surface of the first layer.

主权项

1. A semiconductor device comprising:
a first layer including a group-III nitride semiconductor of a first conduction type; a second layer including a group-III nitride semiconductor of a second conduction type on a first surface of the first layer; a third layer including an Al-containing group-III nitride semiconductor on a first region of a surface of the second layer; a gate electrode having one end above a surface of the third layer and the other end within the first layer via the second layer, the gate electrode being insulated from the first layer, the second layer and the third layer; a first electrode connected to the third layer; a second electrode connected to a second region of the surface of the second layer; and a third electrode provided above a second surface of the first layer, the second surface being opposite to the first surface of the first layer.