发明名称 |
Method of fabricating interconnect structure for package-on-package devices |
摘要 |
An interconnect structure and a method of forming an interconnect structure are provided. The interconnect structure is formed over a carrier substrate, upon which a die may also be attached. Upon removal of the carrier substrate and singulation, a first package is formed. A second package may be attached to the first package, wherein the second package may be electrically coupled to through vias formed in the first package. |
申请公布号 |
US9048222(B2) |
申请公布日期 |
2015.06.02 |
申请号 |
US201313787547 |
申请日期 |
2013.03.06 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Hung Jui-Pin;Lin Jing-Cheng;Tsai Po-Hao;Lin Yi-Jou;Chen Shuo-Mao;Yeh Chiung-Han;Yeh Der-Chyang |
分类号 |
H01L21/00;H01L23/34;H01L23/48;H01L23/00;H01L23/528;H01L23/538;H01L25/10;H01L25/065;H01L21/56 |
主分类号 |
H01L21/00 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. A method of forming a semiconductor device, the method comprising:
forming a protective layer over a carrier substrate; forming through vias extending up from the protective layer; attaching one or more dies to the protective layer; forming a molding compound between the through vias and the one or more dies; electrically coupling electrical connectors to the through vias and electrical contacts on the one or more dies; debonding the carrier substrate and exposing the protective layer; and after the debonding, forming openings in the protective layer to expose the through vias. |
地址 |
Hsin-Chu TW |