发明名称 Method of fabricating interconnect structure for package-on-package devices
摘要 An interconnect structure and a method of forming an interconnect structure are provided. The interconnect structure is formed over a carrier substrate, upon which a die may also be attached. Upon removal of the carrier substrate and singulation, a first package is formed. A second package may be attached to the first package, wherein the second package may be electrically coupled to through vias formed in the first package.
申请公布号 US9048222(B2) 申请公布日期 2015.06.02
申请号 US201313787547 申请日期 2013.03.06
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Hung Jui-Pin;Lin Jing-Cheng;Tsai Po-Hao;Lin Yi-Jou;Chen Shuo-Mao;Yeh Chiung-Han;Yeh Der-Chyang
分类号 H01L21/00;H01L23/34;H01L23/48;H01L23/00;H01L23/528;H01L23/538;H01L25/10;H01L25/065;H01L21/56 主分类号 H01L21/00
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A method of forming a semiconductor device, the method comprising: forming a protective layer over a carrier substrate; forming through vias extending up from the protective layer; attaching one or more dies to the protective layer; forming a molding compound between the through vias and the one or more dies; electrically coupling electrical connectors to the through vias and electrical contacts on the one or more dies; debonding the carrier substrate and exposing the protective layer; and after the debonding, forming openings in the protective layer to expose the through vias.
地址 Hsin-Chu TW