Method for forming thin film while providing cooling gas to rear surface of substrate

摘要

Deterioration of the degree of vacuum in a vacuum chamber is prevented while securing adequate cooling performance by gas cooling. A substrate 21 is provided in a vacuum, and the cooling body 1 is provided close to a film non-formation surface of the substrate 21. A thin film is formed by depositing a film forming material on a film formation surface of the substrate 21 while introducing a cooling gas into between the substrate 21 and the cooling body 1. At this time, a gas which reacts with the film forming material is introduced as the cooling gas.

主权项

1. A method for depositing a film forming material in a vacuum on a substrate having a front surface and a rear surface to form a film, the method comprising:
a first film forming step of forming a first layer of the film on the front surface of the substrate; a first cooling step of cooling down the substrate by introducing a first cooling gas to the rear surface during the first film forming step; a second film forming step of forming a second layer of the film on the first layer; and a second cooling step of cooling down the substrate by introducing a second cooling gas to the rear surface during the second film forming step, wherein: an amount of a gas, which chemically reacts with the film forming material and the substrate in film forming conditions in the first and second film forming steps, in the first cooling gas is smaller than an amount of the gas in the second cooling gas, so as to suppress deterioration of the substrate caused by a chemical reaction between the gas and the substrate, the substrate is a metal foil, the gas which reacts with the film forming material contains oxygen, the film forming material used in the first film forming step is the same as the film forming material used in the second film forming step, and a heat load received by the substrate during the first film forming step is smaller than a heat load received by the substrate during the second film forming step.