Semiconductor memory device and control method of the same

摘要

A semiconductor memory device includes a plurality of memory cells and a control circuit configured to apply a program voltage of an initial level to a control electrode of a selected memory cell and then of an increased level a number of times, each time without decreasing the program voltage applied to the control electrode, prior to executing a program verifying operation on the selected memory cell. In addition, the control circuit may further be configured to apply an erase voltage of an initial level to a control electrode of a selected memory cell and then of an increased level a number of times, each time without decreasing the erase voltage applied to the control electrode, prior to executing an erase verifying operation on the selected memory cell.

主权项

1. A semiconductor memory device, comprising:
a plurality of memory cells; and a control circuit configured to apply a program voltage of an initial level to a first line electrically connected to a control electrode of a selected memory cell, and then of an increased level a number of times, each time without decreasing the program voltage applied to the first line, and execute a first verifying operation to apply a voltage that is lower than the program voltage of the initial level to the first line when the program voltage has been increased a first number of times.