THIN FILM TRANSISTOR HAVING DOUBLE CHANNEL LAYERS

摘要

Disclosed is a thin film transistor including a double channel layer. The disclosed thin film transistor includes a gate insulation layer which is formed on a gate electrode, a plurality of channel layers which include a first channel layer and a second channel layer which are successively formed on the gate insulation layer, and a source electrode and a drain electrode which are in contact with both ends of each channel layer. The first channel layer is a metal oxide layer. The second channel layer is a metal oxynitride layer.