Apparatus and methods for improving parallel conduction in a quantum well device

摘要

Embodiments of an apparatus and methods of providing a quantum well device for improved parallel conduction are generally described herein. Other embodiments may be described and claimed.

主权项

1. A non-planar transistor, comprising:
a substrate; a P-N junction superlattice on the substrate; a first buffer layer between a first P-N junction and a second P-N junction of the P-N junction superlattice; a second buffer layer on the second P-N junction; a delta doped large bandgap stack on the second buffer layer; and a multi-gate body on the delta doped large bandgap stack.