Method of writing to a spin torque magnetic random access memory

摘要

A method includes destructively reading bits of a spin torque magnetic random access memory and immediately writing back the original or inverted values. A detection of the majority state of the write back bits and a conditional inversion of write back bits are employed to reduce the number of write back pulses. A subsequent write command received within a specified time or before an original write operation is commenced will cause a portion of the write back pulses or the original write operation pulses to abort. Write pulses during subsequent write operations will follow the conditional inversion determined for the write back bits during destructive read.

主权项

1. A method of operation of a spin-torque magnetoresistive memory, the method comprising:
sampling magnetic bits to provide a sampled voltage for each of the magnetic bits, wherein the magnetic bits correspond to a page within the spin-torque magnetoresistive memory; applying a first write current pulse to each of the magnetic bits to set all of the magnetic bits in the page to a first logic state; resampling each of the magnetic bits in the page to provide a resampled voltage for each magnetic bit; for each magnetic bit in the page, comparing the resampled voltage with the sampled voltage to determine a bit state for the magnetic bit, wherein the bit state for each magnetic bit is either the first logic state or a second logic state; inverting all the bit states for the magnetic bits in the page when a majority of the magnetic bits are in the second logic state; and initiating a write-back to each of the magnetic bits in the page having the second logic state, wherein the write-back includes applying a second write current pulse having opposite polarity in comparison with the first write current pulse to set the magnetic bit in the spin-torque magnetoresistive memory to the second state.