发明名称 CCD ACCUMULATING CHARGES OUTSIDE THE IMAGE FRAME
摘要 In one embodiment charges from the photodiodes in a CCD are interline-transferred to a vertical shift register; then they are transferred vertically to a second image frame, where they are interline-transferred to storage pixels in the second frame. Repeating this process one or more times leads to accumulation of charge in the storage pixels having full well capacity bigger than the original photodiodes. In another embodiment, charges from a CCD in the horizontal readout register are selectively transferred through a gate into a second horizontal register. From the second horizontal register charges are shifted vertically into vertical shift registers and then transferred into the storage pixels having big full well capacity. During readout time, in both cases charges are transferred to a horizontal shift register for readout as in a conventional CCD. In a plurality of embodiments this device can be used instead of a CCD with big pixels or binning, with the advantage that the photodiodes may be physically smaller in size compared to the size needed for storage of the full charge that is accumulated. This invention greatly extends the dynamic range that can be achieved with small pixels.
申请公布号 US2013176471(A1) 申请公布日期 2013.07.11
申请号 US201313733202 申请日期 2013.01.03
申请人 GEORGIEV TODOR;GEORGIEVA ELKA 发明人 GEORGIEV TODOR;GEORGIEVA ELKA
分类号 H04N5/335 主分类号 H04N5/335
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