发明名称 High brightness laser-driven light source
摘要 An apparatus for producing light includes a chamber and an ignition source that ionizes a gas within the chamber. The apparatus also includes at least one laser that provides energy to the ionized gas within the chamber to produce a high brightness light. The laser can provide a substantially continuous amount of energy to the ionized gas to generate a substantially continuous high brightness light.
申请公布号 US9048000(B2) 申请公布日期 2015.06.02
申请号 US201313964938 申请日期 2013.08.12
申请人 Energetiq Technology, Inc. 发明人 Smith Donald K.
分类号 G01J1/00;G21K5/04;B82Y10/00;G03F7/20;H01J61/16;H01J65/04;H05B41/38;H05G2/00;G21K5/00 主分类号 G01J1/00
代理机构 Proskauer Rose LLP 代理人 Proskauer Rose LLP
主权项 1. A method for illuminating features of a semiconductor wafer, comprising: ionizing a gas within a sealed pressurized plasma chamber having an operating pressure of at least 10 atmospheres; providing substantially continuous laser energy having a wavelength range of up to about 2000 nm through a region of material of the sealed pressurized chamber that is transparent to the substantially continuous laser energy to the ionized gas to sustain a plasma within the sealed pressurized plasma chamber to produce plasma-generated light having wavelengths greater than 50 nm; and illuminating the wafer with plasma-generated light having wavelengths greater than 50 nm that exits the sealed pressurized chamber.
地址 Woburn MA US