发明名称 |
High brightness laser-driven light source |
摘要 |
An apparatus for producing light includes a chamber and an ignition source that ionizes a gas within the chamber. The apparatus also includes at least one laser that provides energy to the ionized gas within the chamber to produce a high brightness light. The laser can provide a substantially continuous amount of energy to the ionized gas to generate a substantially continuous high brightness light. |
申请公布号 |
US9048000(B2) |
申请公布日期 |
2015.06.02 |
申请号 |
US201313964938 |
申请日期 |
2013.08.12 |
申请人 |
Energetiq Technology, Inc. |
发明人 |
Smith Donald K. |
分类号 |
G01J1/00;G21K5/04;B82Y10/00;G03F7/20;H01J61/16;H01J65/04;H05B41/38;H05G2/00;G21K5/00 |
主分类号 |
G01J1/00 |
代理机构 |
Proskauer Rose LLP |
代理人 |
Proskauer Rose LLP |
主权项 |
1. A method for illuminating features of a semiconductor wafer, comprising:
ionizing a gas within a sealed pressurized plasma chamber having an operating pressure of at least 10 atmospheres; providing substantially continuous laser energy having a wavelength range of up to about 2000 nm through a region of material of the sealed pressurized chamber that is transparent to the substantially continuous laser energy to the ionized gas to sustain a plasma within the sealed pressurized plasma chamber to produce plasma-generated light having wavelengths greater than 50 nm; and illuminating the wafer with plasma-generated light having wavelengths greater than 50 nm that exits the sealed pressurized chamber. |
地址 |
Woburn MA US |