Patterning methods and methods of forming electrically conductive lines

摘要

Some embodiments include methods of forming electrically conductive lines. Photoresist features are formed over a substrate, with at least one of the photoresist features having a narrowed region. The photoresist features are trimmed, which punches through the narrowed region to form a gap. Spacers are formed along sidewalls of the photoresist features. Two of the spacers merge within the gap. The photoresist features are removed to leave a pattern comprising the spacers. The pattern is extended into the substrate to form a plurality of recesses within the substrate. Electrically conductive material is formed within the recesses to create the electrically conductive lines. Some embodiments include semiconductor constructions having a plurality of lines over a semiconductor substrate. Two of the lines are adjacent to one another and are substantially parallel to one another except in a region wherein said two of the lines merge into one another.

主权项

1. A method of forming a pattern, comprising:
forming photoresist features over a substrate; at least one of the photoresist features having a narrowed region; the narrowed region comprising concave segments on opposing sides of the photoresist feature; the concave segments comprising outer surfaces; an opening extending from the outer surface of one of the concave segments to the outer surface of the other of the concave segments, and extending entirely through the narrowed region; trimming the photoresist features to reduce widths of the photoresist features, the trimming punching through the narrowed region to form a gap extending through said at least one of the photoresist features; forming spacers along sidewalls of the photoresist features; the spacers on opposing sides of said at least one of the photoresist features merging within the gap; and removing the photoresist features to leave a pattern comprising the spacers.