发明名称 Die seal ring and method of forming the same
摘要 A die seal ring is provided. The die seal ring includes a substrate and a first layer extruding from the substrate. The first layer has a first fin ring structure and a layout of the first fin ring structure has a stamp-like shape. In addition, a method for forming a die seal ring is provided. A substrate having an active region is provided. A patterned sacrificial layer is formed on the substrate. A spacer is formed on the sidewall of the patterned sacrificial layer. The patterned sacrificial layer is removed. The substrate is patterned by using the spacer as a mask, thereby simultaneously forming at least a fin structure of a Fin-FET and a first layer of the die seal ring.
申请公布号 US9048246(B2) 申请公布日期 2015.06.02
申请号 US201313921174 申请日期 2013.06.18
申请人 UNITED MICROELECTRONICS CORP. 发明人 Wei Ming-Te;Tsao Po-Chao;Yang Ching-Li;Chen Chien-Yang;Chen Hui-Ling;Huang Guan-Kai
分类号 H01L23/00;H01L21/768;H01L21/78;H01L23/58 主分类号 H01L23/00
代理机构 代理人 Hsu Winston;Margo Scott
主权项 1. A die seal ring, comprising: a substrate; and a first layer in contact with and extruding from an uppermost surface of the substrate, wherein the first layer has a first fin ring structure and a layout of the first fin ring structure has a stamp-like shape, wherein the first layer comprises a same semiconductor material as the substrate.
地址 Science-Based Industrial Park, Hsin-Chu TW