发明名称 |
Die seal ring and method of forming the same |
摘要 |
A die seal ring is provided. The die seal ring includes a substrate and a first layer extruding from the substrate. The first layer has a first fin ring structure and a layout of the first fin ring structure has a stamp-like shape. In addition, a method for forming a die seal ring is provided. A substrate having an active region is provided. A patterned sacrificial layer is formed on the substrate. A spacer is formed on the sidewall of the patterned sacrificial layer. The patterned sacrificial layer is removed. The substrate is patterned by using the spacer as a mask, thereby simultaneously forming at least a fin structure of a Fin-FET and a first layer of the die seal ring. |
申请公布号 |
US9048246(B2) |
申请公布日期 |
2015.06.02 |
申请号 |
US201313921174 |
申请日期 |
2013.06.18 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Wei Ming-Te;Tsao Po-Chao;Yang Ching-Li;Chen Chien-Yang;Chen Hui-Ling;Huang Guan-Kai |
分类号 |
H01L23/00;H01L21/768;H01L21/78;H01L23/58 |
主分类号 |
H01L23/00 |
代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
主权项 |
1. A die seal ring, comprising:
a substrate; and a first layer in contact with and extruding from an uppermost surface of the substrate, wherein the first layer has a first fin ring structure and a layout of the first fin ring structure has a stamp-like shape, wherein the first layer comprises a same semiconductor material as the substrate. |
地址 |
Science-Based Industrial Park, Hsin-Chu TW |