发明名称 |
Concurrent operation of plural flash memories |
摘要 |
A device comprises an address storage device. A first circuit includes a first flash memory, configured to sequentially receive first and second addresses and store the first address in the address storage device. The first circuit has a first set of control inputs for causing the first circuit to perform a first operation from the group consisting of read, program and erase on a cell of the first flash memory corresponding to a selected one of the first and second addresses. A second circuit includes a second flash memory, configured to receive the second address. The second circuit has a second set of control inputs for causing the second circuit to read data from a cell of the second flash memory corresponding to the second address while the first operation is being performed. |
申请公布号 |
US9047956(B2) |
申请公布日期 |
2015.06.02 |
申请号 |
US201314014471 |
申请日期 |
2013.08.30 |
申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
Yang Tien-Chun;Lee Chia-Fu;Chih Yue-Der |
分类号 |
G11C16/04;G11C16/06;G11C16/30 |
主分类号 |
G11C16/04 |
代理机构 |
Duane Morris LLP |
代理人 |
Duane Morris LLP ;Koffs Steven E. |
主权项 |
1. A device comprising:
a first circuit providing a signal used by a first memory, the first circuit configured to perform an operation in the first memory; and a second circuit connected to use the signal from the first circuit, the second circuit configured to read from a second memory while the operation is being performed. |
地址 |
Hsin-Chu TW |