Ⅲ族氮化物半导体基板、磊晶基板及半导体装置,申请号TW099102706-传众专利搜索

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发明名称	Ⅲ族氮化物半导体基板、磊晶基板及半导体装置
摘要
申请公布号	TWI487005	申请公布日期	2015.06.01
申请号	TW099102706	申请日期	2010.01.29
申请人	住友电气工业股份有限公司	发明人	石桥惠二
分类号	H01L21/20;H01L33/00	主分类号	H01L21/20
代理机构		代理人	陈长文台北市松山区敦化北路201号7楼
主权项	一种III族氮化物半导体基板，其系用于半导体装置中者，于上述III族氮化物半导体基板之表面包含表面层，上述表面层包含以S换算为30×1010个/cm2~2000×1010个/cm2之硫化物、及以O换算为2at%~20at%之氧化物，并且上述表面之法线轴相对于c轴之倾斜角度为10°~81°。
地址	日本

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