| 摘要 |
<p>Provided is an electrostatic discharge protection circuit having a turn-on velocity and high current driving capacity. A first N well which includes a first N+ region connected to the anode, a first P+ region and a second N+ region is formed on a substrate. A second N well which includes a gate connected to a cathode, a second P+ region, a third N+ region is formed. A P+ region is formed between the P well and the second N well. An avalanche breakdown phenomenon is generated in the junction of the N well and the P well to form ACR. Current driving capacity is increased by further forming a P+ drift region, a gate formed in the second N well, a PMOS transistor by the second P+ region and a third PNP transistor.</p> |
