| 摘要 |
PROBLEM TO BE SOLVED: To provide a junction field-effect transistor cell having a side channel.SOLUTION: A junction field-effect transistor cell of a semiconductor device includes an upper gate region, a side channel region and a buried gate region arranged along the vertical direction. The side channel region includes a first conductivity type first zone and a second conductivity type second zone, and the first and second zones are alternately arranged along a lateral direction perpendicular to the vertical direction. A pinch-off voltage of the junction field-effect transistor cell does not depend on a vertical expansion of the side channel region, or only to a low degree depends, on a vertical expansion of the side channel region. |
