| 摘要 |
<p>The present invention provides a microwave plasma chemical vapour deposition apparatus, comprising: a waveguide apparatus (1) used for introducing a microwave, the waveguide apparatus (1) being connected to a reaction chamber (2) arranged thereunder, equally spaced reaction gas inlets (9) being arranged on the top of the reaction chamber (2); an isolation window (7) is arranged at the level of the connection between the waveguide apparatus (1) and the reaction chamber (2), said isolation window (7) being used for separating the waveguide apparatus (1) and the reaction chamber (2) such that the reaction chamber (2) maintains a pre-set degree of vacuum; and a sample platform (4) used for supporting a substrate holder (3) is arranged coaxially inside the reaction chamber (2), gas channels enabling reaction gas to flow into the reaction chamber (2) being provided around the periphery of the substrate holder (3). Using the present microwave plasma chemical vapour deposition apparatus, gas flow distribution can be changed, increasing the concentration of dopant element in the vicinity of the substrate holder surface such that the level of utilisation of dopant gas in the plasma is increased and film-forming effects are strengthened.</p> |
