| 发明名称 |
FIELD EFFECT TRANSISTORS WITH VARYING THRESHOLD VOLTAGES |
| 摘要 |
A method including providing a semiconductor substrate including a first semiconductor device and a second semiconductor device, the first and second semiconductor devices including dummy spacers, dummy gates, and extension regions; protecting the second semiconductor device with a mask; removing the dummy spacers from the first semiconductor device; and depositing in-situ doped epitaxial regions on top of the extension regions of the first semiconductor device. |
| 申请公布号 |
US2015145063(A1) |
申请公布日期 |
2015.05.28 |
| 申请号 |
US201414559951 |
申请日期 |
2014.12.04 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Adam Thomas N.;Cheng Kangguo;Doris Bruce B.;Khakifirooz Ali;Reznicek Alexander |
| 分类号 |
H01L27/088;H01L21/28;H01L29/66;H01L21/02;H01L21/8234;H01L29/167 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
providing a semiconductor substrate comprising a first semiconductor device and a second semiconductor device, wherein the first and second semiconductor devices comprising dummy spacers, dummy gates, and extension regions; protecting the second semiconductor device with a mask; removing the dummy spacers from the first semiconductor device; and depositing in-situ doped epitaxial regions on top of the extension regions of the first semiconductor device. |
| 地址 |
Armonk NY US |
