LIGHT-EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a transistor of a new multi-gate structure whose operation characteristics and reliability are improved.SOLUTION: In a transistor of a multi-gate structure including: two or more gate electrodes; two or more channel forming areas connected in series; a source area; a drain area; and a semiconductor layer having a high concentration impurity area, a channel length of a channel forming area neighboring to the source area side is made to be longer than a channel length of a channel forming area neighboring to the drain area side.