| 摘要 |
PROBLEM TO BE SOLVED: To improve performance of a semiconductor device.SOLUTION: A gate electrode GE is formed on an SOI substrate SUB via a gate insulating film GI. A lamination film having an insulating film IL2 and an insulating film IL3 provided thereon is formed on the SOI substrate SUB so as to cover the gate electrode GE, and then the lamination film is etched back. Thereby, a sidewall spacer SW1 consisting of the lamination film is formed on the side wall of the gate electrode GE. Thereafter, on a semiconductor layer SM1 of the SOI substrate SUB exposed without being covered with the gate electrode GE and the sidewall spacer SW1, a semiconductor layer EP is epitaxially grown, and then, a surface of the semiconductor layer EP is oxidized to form an oxide film OX1 on the surface of the semiconductor layer EP. Thereafter, the insulating film IL3 configuring the sidewall spacer SW1 is removed. |
