发明名称 SEMICONDUCTOR DEVICE AND PROGRAM FAIL CELLS
摘要 A semiconductor device includes a memory block including even memory cells configured to form an even page and odd memory cells configured to form an odd page. The semiconductor device may also include an operation circuit configured to perform a program operation on the even memory cells and the odd memory cells. A first verify operation may separately verify the even memory cells and the odd memory cells, and a second verify operation may simultaneously verify the even memory cells and the odd memory cells. Further, the operation circuit may be configured to selectively perform the first verify operation and the second verify operation depending on a number of adjacent program fail cells in response to a verify result value.
申请公布号 US2015146488(A1) 申请公布日期 2015.05.28
申请号 US201414263121 申请日期 2014.04.28
申请人 SK hynix Inc. 发明人 LIM In Geun;LEE Min Kyu;AN Chi Wook
分类号 G11C16/34 主分类号 G11C16/34
代理机构 代理人
主权项 1. A semiconductor device, comprising: a memory block including even memory cells configured to form an even page and odd memory cells configured to form an odd page; and an operation circuit configured to perform a program operation on the even memory cells and the odd memory cells, a first verify operation for separately verifying the even memory cells and the odd memory cells, and a second verify operation for simultaneously verifying the even memory cells and the odd memory cells, wherein the operation circuit is configured to selectively perform the first verify operation and the second verify operation depending on a number of adjacent program fail cells in response to a verify result value.
地址 Icheon-si Gyeonggi-do KR