发明名称 |
Bipolar layout for improved performance |
摘要 |
A bipolar transistor is disclosed which substantially reduces prior art problems associated with current crowding by maximizing the active periphery of the transistor's emitter [10].
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申请公布号 |
US5352924(A) |
申请公布日期 |
1994.10.04 |
申请号 |
US19930048531 |
申请日期 |
1993.04.14 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MAHANT-SHETTI, SHIVALING;SCOTT, DAVID B. |
分类号 |
H01L29/06;H01L29/732;(IPC1-7):H01L29/72 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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