发明名称 Bipolar layout for improved performance
摘要 A bipolar transistor is disclosed which substantially reduces prior art problems associated with current crowding by maximizing the active periphery of the transistor's emitter [10].
申请公布号 US5352924(A) 申请公布日期 1994.10.04
申请号 US19930048531 申请日期 1993.04.14
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 MAHANT-SHETTI, SHIVALING;SCOTT, DAVID B.
分类号 H01L29/06;H01L29/732;(IPC1-7):H01L29/72 主分类号 H01L29/06
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