SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

A semiconductor device including a substrate having an active region and a field-plate region therein is disclosed. At least one trench-gate structure is in the substrate. The field-plate region is at a first side of the trench-gate structure. At least one source doped region is in the substrate at a second side opposite to the first side of the trench-gate structure. The source doped region adjoins the sidewall of the trench-gate structure. A drain doped region is in the substrate corresponding to the active region. The field-plate region is between the drain doped region and the trench-gate structure. An extending direction of length of the trench-gate structure is perpendicular to that of the drain doped region as viewed from a top-view perspective.

主权项

1. A semiconductor device, comprising:
a substrate having an active region and a field-plate region in the active region; at least one trench-gate structure in the substrate, wherein the field-plate region is at a first side of the at least one trench-gate structure; at least one source doped region in the substrate at a second side opposite to the first side of the at least one trench-gate structure, wherein the at least one source doped region adjoins a sidewall of the at least one trench-gate structure; and a drain doped region in the substrate corresponding to the active region, wherein the field-plate region is between the drain doped region and the at least one trench-gate structure, and wherein an extending direction of a length of the at least one trench-gate structure is perpendicular to that of the drain doped region as viewed from a top-view perspective.