SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

摘要

To provide a semiconductor device having a nonvolatile memory improved in characteristics. In the semiconductor device, a nonvolatile memory has a high-k insulating film (high dielectric constant film) between a control gate electrode portion and a memory gate electrode portion and a transistor of a peripheral circuit region has a high-k/metal configuration. The high-k insulating film arranged between the control gate electrode portion and the memory gate electrode portion relaxes an electric field intensity at the end portion (corner portion) of the memory gate electrode portion on the side of the control gate electrode portion. This results in reduction in uneven distribution of charges in a charge accumulation portion (silicon nitride film) and improvement in erase accuracy.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; a first gate electrode portion arranged over the semiconductor substrate; a second gate electrode portion arranged over the semiconductor substrate so as to be adjacent to the first gate electrode portion; a first insulating film formed between the first gate electrode portion and the semiconductor substrate; a second insulating film formed between the second gate electrode portion and the semiconductor substrate and between the first gate electrode portion and the second gate electrode portion and having a charge accumulation portion in the second insulating film; and a metal compound film arranged between the first gate electrode portion and the first insulating film, wherein the first insulating film is formed between the first gate electrode portion and the semiconductor substrate and between the first gate electrode portion and the second gate electrode portion and having a dielectric constant higher than that of a silicon nitride film.