| 摘要 |
To provide a method for manufacturing a crystalline semiconductor and a device for manufacturing a crystalline semiconductor capable of more uniformly crystallizing a non-crystalline semiconductor, the device comprises a plurality of pulse laser light sources (2, 3) and an optical system (12) for leading a plurality of pulse laser light beams to a non-crystalline semiconductor. The pulse laser light beams have, in one pulse in an intensity change over time, at least a first peak group and a second peak group that occurs afterward; the maximum peak intensity in the first peak group is the maximum height in the one pulse, the ratio (b/a) between the maximum peak intensity (a) of the first peak group and the maximum peak intensity (b) of the second peak group is the maximum peak intensity ratio, the maximum peak intensity ratio used as a standard is the standard maximum peak intensity ratio, and the maximum peak intensity ratio of the plurality of pulse laser light beams has a difference of 4% or less with respect to the standard maximum peak intensity ratio. |
