SEMICONDUCTOR SUBSTRATE EVALUATING METHOD, SEMICONDUCTOR SUBSTRATE FOR EVALUATION, AND SEMICONDUCTOR DEVICE

摘要

On an EP substrate 1, an EP layer 2 having a conductivity type different from that of the EP substrate 1 is grown. With ion implantation, a well 5 having the same conductivity type as the EP layer 2 is formed, and a channel stop layer 10 is also formed. A dopant having a conductivity type different from that of the well 5 is diffused in the well 5 to form a pn junction 7 in the well 5. A plurality of cells 20 each having the diffusion layer 6 as one electrode and a rear surface 1a as the other electrode are formed as a TEG. Using the TEG, junction leakage currents from two depletion layers, a depletion layer 8 in the well and a depletion layer 4 at an interface between the EP layer 2 and the EP substrate 1, are measured.

主权项

1. A semiconductor substrate evaluating method, wherein
on a semiconductor substrate having a first conductivity type, an epitaxial layer having a second conductivity type different from the first conductivity type is grown, a well having the second conductivity type identical to the conductivity type of the epitaxial layer is formed in the epitaxial layer, a channel stop layer is formed at the periphery of a junction of the well, a dopant having the first conductivity type different from the conductivity type of the well is diffused in the well to form a pn junction and one electrode, and a surface of the semiconductor substrate on which no epitaxial layer is grown is regarded as the other electrode, thereby to provide one cell, and using, as a TEG (Test Element Group), a plurality of the cells formed on the semiconductor substrate, junction leakage currents from two depletion layers including a depletion layer formed in the well and a depletion layer formed at an interface between the epitaxial layer and the semiconductor substrate are measured.