The present invention relates to a chemical vapor deposition apparatus. The chemical vapor deposition apparatus of the present invention comprises a chamber having a substrate installed inside; a shower head assembly installed on the upper part of the chamber, and discharging a reactive gas to the inside of the chamber; and a shutter opening and closing a substrate inlet formed on the chamber for the substrate to be input. According to the present invention, a chamber heating part is installed to make uniform temperature gradient inside the chamber, thereby increasing uniformity of deposition.
申请公布号
KR20150057678(A)
申请公布日期
2015.05.28
申请号
KR20130141343
申请日期
2013.11.20
申请人
LG CHEM. LTD.;SUNIC SYSTEM. LTD.
发明人
KIM, JONG SEOK;LEE, JUNG HYOUNG;HAHM, YUN HYE;LEE, YOUNG JONG;SUNG, GI HYUN;CHOI, CHANG SIK;YOON, JONG KAB;LEE, JAE HO