发明名称 |
TIME ESTIMATING METHOD, MEMORY STORAGE DEVICE, AND MEMORY CONTROLLING CIRCUIT UNIT |
摘要 |
A time estimating method, a memory storage device, and a memory controlling circuit unit are provided for a rewritable non-volatile memory module having memory cells. The method includes: writing first data into first memory cells of the memory cells; reading the first memory cells according to a reading voltage, so as to determine whether each of the first memory cells belongs to a first state or a second state; and calculating a quantity of the first memory cells belonging to the first state, and obtaining a time information of the rewritable non-volatile memory module according to the quantity. |
申请公布号 |
US2015149701(A1) |
申请公布日期 |
2015.05.28 |
申请号 |
US201414156477 |
申请日期 |
2014.01.16 |
申请人 |
Phison Electronics Corp. |
发明人 |
Lin Wei;Hsu Yu-Cheng |
分类号 |
G11C16/32;G06F12/02 |
主分类号 |
G11C16/32 |
代理机构 |
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代理人 |
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主权项 |
1. A time estimating method for a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of memory cells, and the time estimating method comprises:
writing first data into a plurality of first memory cells of the memory cells; reading the first memory cells according to a reading voltage, so as to determine whether each of the first memory cells belongs to a first state or a second state; and calculating a first quantity of the first memory cells belonging to the first state, and obtaining first time information of the rewritable non-volatile memory module according to the first quantity. |
地址 |
Miaoli TW |