Provided is an apparatus for manufacturing polysilicon using a chemical vapor deposition (CVD) reactor. The apparatus for manufacturing polysilicon comprises: a reaction chamber including a substrate and a reactor cover; at least a pair of electrodes which are installed by penetrating the substrate with an insulating member as a medium and connected to a power supply; at least a pair of filaments which are coupled respectively to electrodes by an electrode chuck and of which upper ends are connected to each other; a cover assembly which includes an electrode cover for enclosing each upper surface and side surface of the electrodes on the substrate and a cover shield for covering the upper surface of the electrode cover.
申请公布号
KR20150057768(A)
申请公布日期
2015.05.28
申请号
KR20130141533
申请日期
2013.11.20
申请人
HANWHA CHEMICAL CORPORATION
发明人
PARK, KYU HAK;PARK, SUNG EUN;PARK, JEA SUNG;LEE, HEE DONG