| 摘要 |
PROBLEM TO BE SOLVED: To provide a junction field-effect transistor cell having a side channel, which provides a distinctly defined channel width, and facilitates adjustment of pinch-off voltage and production of normally-off type.SOLUTION: A semiconductor device 500 includes a junction field-effect transistor cell having an upper gate region 150, a side channel region 115 and a buried gate region 140. The side channel region 115 is arranged between the upper gate region 150 and the buried gate region 140 along a vertical direction with respect to a first surface of a semiconductor body . The side channel region 115 has at least two first conductivity type first zones 115a and at least one second conductivity type second zone 115b, and first and second zones are alternately arranged along the vertical direction. |
