| 发明名称 |
DETECTION OF SUBSTRATE DEFECTS BY TRACKING PROCESSING PARAMETERS |
| 摘要 |
A method comprising processing a substrate exposed to a plasma in a processing chamber, obtaining a metric indicative of a parameter of the plasma during the processing of the substrate, and determining a defect in the substrate by comparing the metric to a predefined criteria. |
| 申请公布号 |
US2015147830(A1) |
申请公布日期 |
2015.05.28 |
| 申请号 |
US201314091095 |
申请日期 |
2013.11.26 |
| 申请人 |
Applied Materials, Inc. |
发明人 |
ILIOPOULOS Ilias;NA Shuo;YANCY Kelby |
| 分类号 |
H01L21/66 |
主分类号 |
H01L21/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
processing a substrate exposed to a plasma in a processing chamber; obtaining a metric indicative of a parameter of the plasma during the processing of the substrate; and determining a defect in the substrate by comparing the metric to a predefined criteria. |
| 地址 |
Santa Clara CA US |
