| 摘要 |
The objective of the present invention is to provide an apparatus and a method for producing a group III nitride semiconductor device and a method for producing a semiconductor wafer, to promote the growth of group III nitride semiconductor at lower temperature compared to an existing invention and to be suitable for mass production. A manufacturing apparatus (100) has a shower head electrode (1100), a susceptor (1200) for supporting a growth substrate, a first gas supply pipe (1300), and a second gas supply pipe (1420). The first gas supply pipe (1300) has at least one first gas injection hole and supplies an organic metal gas containing group III metal as a first gas. A second gas supply pipe (1420) supplies a gas containing nitrogen as a second gas. The shower head electrode (1100) is arranged far from the first gas injection hole of the first gas supply pipe (1300), as seen from the susceptor (1200). |
