| 摘要 |
<p>The invention relates to a method for operating a semiconductor laser (31), in which the semiconductor laser (31) is driven in a first operating phase (B1) with a first drive current (I1) in such a manner that it assumes a predefinable desired temperature (Tsoll) starting from an initial temperature (T0). According to the invention, the semiconductor laser (31) is driven in a second operating phase (B2), which follows the first operating phase (B1), with a second drive current (I2) in such a manner that the semiconductor laser (31) substantially retains the desired temperature (Tsoll) during the second operating phase (B2).</p> |
