发明名称 結晶育成装置
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an apparatus and a method for growing a crystal, capable of inhibiting separation of a seed crystal from a holding member. <P>SOLUTION: The apparatus for growing the crystal grows a silicon carbide crystal by bringing the lower surface 4B of the seed crystal 4 comprising silicon carbide fixed to the lower end surface 2A of the holding member 2 through an adhesive member 3 into contact with the fused liquid of silicon carbide in a crucible to grow the crystal of silicon carbide on the lower surface 4B from the fused liquid, wherein the holding member 2 comprises carbon, while the adhesive member 3 includes carbon and a material whose boiling point is lower than the melting point of silicon carbide, and the lower end surface 2A of the holding member 2 is a rough surface having a 5-30μm arithmetic average roughness Ra. The method for growing the crystal comprises a step for bringing the lower end surface 2A of the holding member 2 to be the rough surface, a step for applying the adhesive 3 to the lower end surface 2A and a step for fixing the seed crystal 4 to the lower end surface 2A of the holding member 2 through the adhesive 3 by bringing the seed crystal 4 into contact with the adhesive 3. <P>COPYRIGHT: (C)2013,JPO&INPIT</p>
申请公布号 JP5726035(B2) 申请公布日期 2015.05.27
申请号 JP20110212775 申请日期 2011.09.28
申请人 发明人
分类号 C30B29/36;C30B19/06 主分类号 C30B29/36
代理机构 代理人
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