发明名称 SEMICONDUCTOR DEFECT ANALYSIS DEVICE, DEFECT ANALYSIS METHOD, AND DEFECT ANALYSIS PROGRAM
摘要 <p>A failure analysis apparatus 10 is composed of an inspection information acquirer 11 for acquiring a failure observed image P2 of a semiconductor device, a layout information acquirer 12 for acquiring layout information, and a failure analyzer 13 for analyzing a failure of the semiconductor device. The failure analyzer 13 has an analysis region setter for comparing an intensity distribution in the failure observed image with a predetermined intensity threshold to extract a reaction region arising from a failure, and for setting an analysis region used in the failure analysis of the semiconductor device, in correspondence to the reaction region. This substantializes a semiconductor failure analysis apparatus, failure analysis method, and failure analysis program capable of securely and efficiently performing the analysis of the failure of the semiconductor device using the failure observed image.</p>
申请公布号 EP2028501(A4) 申请公布日期 2015.05.27
申请号 EP20060822072 申请日期 2006.10.23
申请人 HAMAMATSU PHOTONICS K.K. 发明人 MAJIMA, TOSHIYUKI;SHIMASE, AKIRA;TERADA, HIROTOSHI;HOTTA, KAZUHIRO
分类号 G01R31/311;G01N21/956 主分类号 G01R31/311
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