| 摘要 |
A dielectric-thin-film forming composition for forming a BST dielectric thin film, includes a liquid composition for forming a thin film which takes a form of a mixed composite metal oxide in which a composite oxide B including Cu (copper) is mixed into a composite metal oxide A expressed by a formula: Ba 1 - X Sr x Ti y 0 3 (wherein 0.2<x<0.6 and 0.9<y<l.l), the liquid composition is an organic metal compound solution in which a raw material for composing the composite metal oxide A and a raw material for composing the composite oxide B are dissolved in an organic solvent at a proportion having a metal atom ratio expressed by the formula shown above and a molar ratio between A and B in the range of 0.02<B/A<0.15. |
