Semiconductor device for restraining creep-age phenomenon and fabricating method thereof

摘要

The present invention relates generally to a semiconductor device and, more specifically, to optimizing the creep-age distance of the power semiconductor device and a preparation method thereof. The power semiconductor device includes a chip mounting unit with a die paddle and a plurality of leads arranged side by side located close to one side edge of the die paddle in a non-equidistant manner, a semiconductor chip attached on the die paddle, and a plastic packaging body covering the die paddle, the semiconductor chip, where the plastic packing body includes a plastic extension portion covering at least a part of a lead shoulder of a lead to obtain better electrical safety distance between the terminals of the semiconductor device, thus voltage creep-age distance of the device is increased.

主权项

1. A power semiconductor device comprising:
a chip mounting unit with a die paddle and a plurality of leads arranged side by side located close to one side edge of the die paddle, a first lead of the plurality of leads connecting to the die paddle, a second and a third leads of the plurality of the leads separating from the die paddle, each of the second and third leads having a bonding area at an end close to the die paddle wherein the second lead being adjacent to the first and the third leads respectively and the first, the second and the third leads being disposed in a non-equidistant manner; a semiconductor chip mounting on the die paddle having a first electrode disposed at a backside of the semiconductor chip in electric connection with the die paddle through a conductive material, and a second and a third electrodes disposed at a front-side of the semiconductor chip opposite the backside of the semiconductor chip respectively in electric connection with respective bonding areas of the second and third leads through conductive structures; and a plastic package body encapsulating the die paddle, the semiconductor chip, the conductive structures and the bonding areas of the second and third leads, wherein the plastic package body further comprises a plastic extension portion extending along a length of one of the first, second and third leads.