Detecting effect of corrupting event on preloaded data in non-volatile memory

摘要

A method includes determining a read threshold voltage corresponding to a group of storage elements in a non-volatile memory that includes a three-dimensional (3D) memory of a data storage device. The method also includes determining an error metric corresponding to data read from the group of storage elements using the read threshold voltage. The method includes comparing the read threshold voltage and the error metric to one or more criteria corresponding to a corrupting event.

主权项

1. A method comprising:
in a data storage device including a non-volatile memory that includes a three-dimensional (3D) memory and circuitry associated with operation of memory cells of the 3D memory, performing:
determining a read threshold voltage corresponding to a group of storage elements in the non-volatile memory;determining an error metric corresponding to data read from the group of storage elements using the read threshold voltage; andcomparing the read threshold voltage and the error metric to one or more criteria corresponding to a corrupting event.