Field effect transistor using graphene

摘要

According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode are spaced apart from each other and arranged to apply voltages to the graphene channel layer. A gate insulation layer is between the graphene channel layer and a gate electrode.

主权项

1. A field effect transistor comprising:
a substrate; a graphene channel layer on the substrate,
the graphene channel layer defining a slit; a source electrode and a drain electrode spaced apart from each other,
the source electrode and the drain electrode being configured to apply voltages to the graphene channel layer; a gate electrode on the graphene channel layer; and a gate insulation layer between the graphene channel layer and the gate electrode.