Interconnect structure and method

摘要

A semiconductor device comprises a first semiconductor chip including a first substrate and a plurality of first metal lines formed over the first substrate and a second semiconductor chip bonded on the first semiconductor chip, wherein the second semiconductor chip comprises a second substrate and a plurality of second metal lines formed over the second substrate. The semiconductor device further comprises a conductive plug coupled between the first metal lines and the second metal lines, wherein the conductive plug comprises a first portion formed over a first side of a hard mask layer, wherein the first portion is of a first width and a second portion formed over a second side of the hard mask layer, wherein the second portion is of a second width greater than or equal to the first width.

主权项

1. An apparatus comprising:
a first semiconductor chip including a first substrate and a plurality of first metal lines formed over the first substrate; a second semiconductor chip bonded on the first semiconductor chip, wherein the second semiconductor chip comprises a second substrate and a plurality of second metal lines formed over the second substrate; and a conductive plug coupled between the first metal lines and the second metal lines, wherein the conductive plug comprises:
a first portion formed over a first side of a hard mask layer, wherein the first portion is of a first width;a second portion formed over a second side of the hard mask layer and below the first substrate, wherein the second portion is of a second width greater than or equal to the first width; anda third portion formed in the first substrate, wherein the third portion is of a third width greater than the second width.